sup/sub85n02-03 vishay siliconix document number: 71421 s-32619?rev. b, 29-dec-03 www.vishay.com 1 n-channel 20-v (d-s) 175 c mosfet product summary v (br)dss (v) r ds(on) ( ) i d (a) a 0.003 @ v gs = 4.5 v 85 20 0.0034 @ v gs = 2.5 v 85 0.0038 @ v gs = 1.8 v 85 d g s n-channel mosfet to-220ab top view gd s to-263 s g top view drain connected to tab d ordering information: sup85n02-03?e3 (lead free) ordering information: sub85n02-03?e3 (lead free) absolute maximum ratings (t c = 25 c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 20 v gate-source voltage v gs 8 v continuous drain current (t j = 175 c) a t c = 25 c i d 85 continuous drain current (t j = 175 c) a t c = 100 c i d 85 a pulsed drain current i dm 240 a avalanche current i ar 30 repetitive a valanche energy b l = 0.1 mh e ar 45 mj power dissipation a t c = 25 c p d 250 w operating junction and storage temperature range t j , t stg ? 55 to 175 c thermal resistance ratings parameter symbol limit unit jtitabit pcb mount (to-263) c r 40 junction-to-ambient free air (to-220ab) r thja 62.5 c/w junction-to-case r thjc 0.6 notes: a. see soa curve for voltage derating. b. duty cycle 1%. c. when mounted on 1? square pcb (fr-4 material).
sup/sub85n02-03 vishay siliconix www.vishay.com 2 document number: 71421 s-32619?rev. b, 29-dec-03 mosfet specifications (t j =25 c unless otherwise noted) parameter symbol test condition min typ max unit static drain-source breakdown voltage v (br)dss v gs = 0 v, i d = 2 ma 20 v gate threshold voltage v gs(th) v ds = v gs , i ds = 2 ma 0.45 v gate-body leakage i gss v ds = 0 v, v gs = 8 v 100 na zero gate voltage drain current i dss v ds = 20 v, v gs = 0 v 1 a zero gate voltage drain current i dss v ds = 20 v, v gs = 0 v, t j = 125 c 250 a on-state drain current a i d(on) v ds = 5 v, v gs = 4.5 v 120 a v gs = 4.5 v, i d = 30 a 0.0025 0.003 v gs = 4.5 v, i d = 30 a, t j = 125 c 0.0042 drain-source on-state resistance a r ds(on) v gs = 4.5 v, i d = 30 a, t j = 175 c 0.005 ds(on) v gs = 2.5 v, i d = 30 a 0.0027 0.0034 v gs = 1.8 v, i d = 30 a 0.003 0.0038 forward transconductance a g fs v ds = 5 v, i d = 30 a 30 s dynamic b input capacitance c iss 21250 output capacitance c oss v gs = 0 v, v ds = 20 v, f = 1 mhz 2350 pf reversen transfer capacitance c rss 1520 total gate charge c q g 140 200 gate-source charge c q gs v ds = 10 v, v gs = 4.5 v, i d = 85 a 18 nc gate-drain charge c q gd ds , gs , d 24 turn-on delay time c t d(on) 20 30 rise time c t r v dd = 10 v, r l = 0.12 200 300 ns turn-off delay time c t d(off) v dd 10 v, r l 0.12 i d 85 a, v gen = 4.5 v, r g = 2.5 450 670 ns fall time c t f g 320 480 source-drain diode ratings and characteristics (t c = 25 c) b pulsed current i sm 240 a forward voltage a v sd i f = 100 a, v gs = 0 v 1.2 1.5 v reverse recovery time t rr i f = 50 a, di/dt = 100 a/ s 75 150 ns notes: a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. c. independent of operating temperature.
sup/sub85n02-03 vishay siliconix document number: 71421 s-32619?rev. b, 29-dec-03 www.vishay.com 3 typical characteristics (25 c unless noted) 0 6000 12000 18000 24000 30000 048121620 0 2 4 6 8 0 50 100 150 200 250 0 100 200 300 400 500 0 20 40 60 80 100 120 0.000 0.001 0.002 0.003 0.004 0.005 0 20 40 60 80 100 120 0 50 100 150 200 250 0.0 0.5 1.0 1.5 2.0 2.5 0 50 100 150 200 250 0246810 output characteristics transfer characteristics capacitance gate charge transconductance on-resistance vs. drain current v ds ? drain-to-source voltage (v) v gs ? gate-to-source voltage (v) ? drain current (a) i d ? gate-to-source voltage (v) q g ? total gate charge (nc) i d ? drain current (a) v ds ? drain-to-source voltage (v) c ? capacitance (pf) v gs ? transconductance (s) g fs 25 c 125 c t c = ? 55 c v ds = 10 v i d = 30 a v gs = 4.5 thru 2 v v gs = 1.8 v c iss c oss c rss t c = ? 55 c 25 c 125 c 1.5 v v gs = 4.5 v ? on-resistance ( r ds(on) ) ? drain current (a) i d 1, 0.5 v i d ? drain current (a) v gs = 2.5 v
sup/sub85n02-03 vishay siliconix www.vishay.com 4 document number: 71421 s-32619?rev. b, 29-dec-03 typical characteristics (25 c unless noted) 0.0 0.3 0.6 0.9 1.2 1.5 1.8 ? 50 ? 25 0 25 50 75 100 125 150 175 on-resistance vs. junction t emperature source-drain diode forward voltage t j ? junction temperature ( c) v sd ? source-to-drain voltage (v) ? source current (a) i s 100 10 1 0.2 0.4 0.6 0.8 1.0 v gs = 4.5 v i d = 30 a t j = 25 c t j = 150 c (normalized) ? on-resistance ( r ds(on) ) 0 22 24 26 28 30 ? 50 ? 25 0 25 50 75 100 125 150 drain-source vo ltage breakdown vs. junction t emperature t j ? junction temperature ( c) i d = 2 ma (v) v (br)dss 0.000 0.004 0.008 0.012 0.016 0.020 0.0 1.0 2.0 3.0 4.0 5.0 on-resistance vs. gate-to-source voltage ? on-resistance ( r ds(on) ) v gs ? gate-to-source voltage (v) i d = 30 a
sup/sub85n02-03 vishay siliconix document number: 71421 s-32619?rev. b, 29-dec-03 www.vishay.com 5 thermal ratings 0 20 40 60 80 100 0 25 50 75 100 125 150 175 safe operating area v ds ? drain-to-source voltage (v) 1000 10 0.1 1 10 100 limited by r ds(on) 0.1 100 t c = 25 c single pulse maximum drain current vs. case t emperature t c ? case temperature ( c) ? drain current (a) i d 1 ms 10 ms 100 ms dc 10 s 100 s normalized thermal transient impedance, junction-to-case square wave pulse duration (sec) 2 1 0.1 0.01 0.0001 0.001 0.01 10 normalized effective transient thermal impedance 100 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 ? drain current (a) i d 1 1 0.1
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